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| SMD Type Mesh Overlay Power MOSFET KTS1C1S250 IC IC Features Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k Gate-to-Source Voltage Continuous Drain Current, @ Tc = 25 Continuous Drain Current, @ Tc = 100 Pulsed Drain Current Total Dissipation at TC = 25 Total Dissipation at TC = 25 Single Operation Dual Operation TJ, TSTG Rthj-amb * ) Symbol VDS VDGR VGS ID ID IDM PTOT 0.75 0.47 3 1.6 2 -65 to 150 62.5 78 /W N-Channel 250 250 25 0.60 0.38 2.4 W A P-Channel 250 250 V Unit V Junction and Storage Temperature Range Thermal Resistance Junction-ambient Max (Single Operating) (Dual Operating) * Mounted on 0.5 inpad of 2oz. copper. www.kexin.com.cn 1 SMD Type KTS1C1S250 Electrical Characteristics Ta = 25 Parameter Drain-source Breakdown Voltage Symbol V(BR)DSS ID = 250 ID = 250 Testconditons A, VGS = 0 A, VGS = 0 N-Ch P-Ch N-Ch Zero Gate Voltage Drain Current (VGS = 0) IDSS VDS = Max Rating VDS = Max Rating, TC = 125 P-Ch N-Ch P-Ch Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance IGSS VGS(th) RDS(on) Ciss Coss Crss Rg VGS = 20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDS = 25V, f = 1 MHz, VGS = 0 P-Channel VDS = 25V, f = 1 MHz, VGS = 0 f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain N-Channel Turn-on Delay Time td(on) VDD=125V,ID=1.5A,RG=4.7 , VGS = 10V P-Channel VDD=125V,ID=1.5A,RG=4.7 , VGS=10V N-Channel VDD =200V, ID=1.5A,VGS = 10V P-Channel VDD = 200V, ID= 1.5A,VGS = 10V N-Channel Turn-off Delay Time td(off) VDD = 125V, ID = 1.5A,RG = 4.7 , VGS = 10V P-Channel Fall Time tf VDD = 200V, ID = 1.5A,RG = 4.7 , VGS = 10V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 2 3 3 0.9 2.1 325 260 51 52 24 25.5 6 6 9 12 11 22 15 16 1.9 1.4 7 7.6 31 29.5 11 7 20 21 Min 250 250 1 1 10 10 Typ IC IC Max Unit V V A A A A A A V V 10 10 4 4 1.4 2.8 VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A VGS = 10V, ID = 0.40A VGS = 10V, ID = 0.30A pF pF pF pF pF pF ns ns ns ns nC nC nC nC nC nC ns ns ns ns 0.75 0.6 3 2.4 A A A A Rise Time tr Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd Source-drain Current Source-drain Current (pulsed) *1 ISD ISDM 2 www.kexin.com.cn SMD Type KTS1C1S250 Electrical Characteristics Ta = 25 Parameter Forward On Voltage *2 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Curren Gate-Source Breakdown Voltage *1 Pulsed: Pulse duration = 300 Symbol VSD trr Qrr IRRM BVGSO s, duty cycle 1.5 %. Testconditons ISD = 3A, VGS = 0 ISD = 3A, VGS = 0 N-Channel ISD = 0.8A, di/dt = 100A/ VDD = 50V, Tj = 150 P-Channel ISD = 0.60A, di/dt = 100A/ VDD = 40V, Tj = 150 Igs= 500 A (Open Drain) s, s, N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 25 127 143 450 806 7 11 Min Typ IC IC Max 1.5 1.5 Unit V V ns ns nC nC A A V *2 Pulse width limited by safe operating area www.kexin.com.cn 3 |
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